Vertical power MOSFET having high withstand voltage and high switching speed,申请号US19890331449-传众专利搜索

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发明名称	Vertical power MOSFET having high withstand voltage and high switching speed
摘要
申请公布号	US5016066(A)	申请公布日期	1991.05.14
申请号	US19890331449	申请日期	1989.03.31
申请人	NEC CORPORATION	发明人	TAKAHASHI, MITSUASA
分类号	H01L29/06;H01L29/08;H01L29/36;H01L29/78	主分类号	H01L29/06
代理机构		代理人
主权项
地址

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