Process for forming a fine resist pattern

摘要

A process for forming a fine resist pattern which comprises forming an organic thin film by coating a substrate with a resist comprising, as a base polymer, a polymer to which there is chemically bonded a functional group which is converted into amino group or sulfonic acid group responding to a first energy beam; forming a surface exposed patterned layer at the vicinity of the surface of the organic thin film by selectively exposing said surface to said first energy beam; selectively staining said surface exposed patterned layer with a substance which absorbs a second energy beam; exposing the entire surface of said organic thin film to said second energy beam and forming a resist pattern by developing the organic thin film exposed to said second energy beam. According to the process of the present invention, a fine resist pattern of a high resolution can be obtained using an exposure apparatus of a shallow focal depth without largely improving the conventional resist process technology.