发明名称 |
Method of making a high performance MOS device having both P- and N-LDD regions using single photoresist mask |
摘要 |
A method for making an integrated circuit structure having both PMOS and NMOS devices with lightly doped (LDD) source and drain regions is disclosed utilizing a single photoresist mask in which a substrate is implanted with a low concentration dopant of a first conductivity type through a silicon nitride shielding layer. Spacers are then formed against the sidewalls of oxide and nitride coated polysilicon gate electrodes by RIE etching of a polysilicon layer formed over the nitride shielding layer subsequent to the first implantation. A separate photoresist mask layer is then formed over a portion of the structure and the remaining exposed portions of the shielding nitride layer are then etched, resulting in the formation of first el-shaped shielding members against the sides of the gate electrodes. The exposed polysilicon spacers are then removed and the substrate is implanted with a high concentration dopant of a second conductivity type at an energy level insufficient to penetrate through the el-shaped nitride spacer to form conventional source/drain regions in the substrate.
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申请公布号 |
US5015595(A) |
申请公布日期 |
1991.05.14 |
申请号 |
US19880242144 |
申请日期 |
1988.09.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WOLLESEN, DONALD L. |
分类号 |
H01L21/336;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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