METHOD OF FORMING THIN OXIDE LAYER BY PLASMA REACTION OF ORGANIC METAL COMPOUND AND METHOD OF FORMING THIN OXIDE LAYER, PROTECTIVE LAYER, CONDUCTOR LAYER, SEMICONDUCTOR LAYER, DIELECTRIC LAYER AND ANTISTATIC FILM,申请号JP19900148858-传众专利搜索

发明名称	METHOD OF FORMING THIN OXIDE LAYER BY PLASMA REACTION OF ORGANIC METAL COMPOUND AND METHOD OF FORMING THIN OXIDE LAYER, PROTECTIVE LAYER, CONDUCTOR LAYER, SEMICONDUCTOR LAYER, DIELECTRIC LAYER AND ANTISTATIC FILM
摘要
申请公布号	JPH03111574(A)	申请公布日期	1991.05.13
申请号	JP19900148858	申请日期	1990.06.08
申请人	SCHERING AG	发明人	YOTSUHEN BARUTO;RUTSUTSU DOICHIYUMAN;ERUNSUTO FUOIRAA;HERUGA HORUTSUSHIYUU;KURISUCHIAN EERU;YOHANESU METSUSERUHOIZAA;YABUIAA RAMIRETSU;SHIRUBUIA RAIHI;BIRUGITSUTO BUAIMAA;ANDOREASU BUEEBAA;HERUMUUTO BUENDERU;HARARUTO ZUURU
分类号	C23C16/40;H01L21/316	主分类号	C23C16/40
代理机构		代理人
主权项
地址