| 摘要 |
PURPOSE:To enable a pn junction to be formed at a semiconductor diamond by joining an n-type cubic system nitriding boron crystal to a p-type diamond crystal. CONSTITUTION:An n-type cubic system nitriding boron crystal (c-BN) is joined to a p-type diamond crystal to obtain a semiconductor heterojunction structure, thus producing a pn junction. A Fermi level 5 is closer to a valence electron band 2 in a diamond and is closer to a propagation band 3 in c-BN. The Fermi level is at the same height no zero biasing. The Fermi level of c-BN increases on forward biasing and the level difference between the propagation bands 1 and 3 and the valence electron bands 2 and 4 becomes smaller. Current flows from right to left, positive holes are injected from the diamond to the c-BN, and electrons are injected from the c-BN to the diamond. The electrons and positive holes are recombined near the junction due to emission of light, etc. Also, a depletion layer becomes narrow. The Fermi level increases at the diamond side on inverse biasing, current is restricted, and the depletion layer width is expanded, thus enabling rectification property and depletion layer to be controlled. |
