| 摘要 |
PURPOSE:To make a MOSFET fine and to realize its high integration by a method wherein a gate electrode is formed on a sidewall face of a channel part and, after that, a drain region and a source region are formed respectively at the lower part and the upper part of the channel part by making use of the gate electrode as a mask. CONSTITUTION:A channel part C is formed on the surface of a semiconductor substrate 1; after that, a gate insulating film 2 is formed. Then, a low-impurity- concentration impurity layer 5A of phosphorus or the like is formed. Then, a gate electrode 3 is formed on a protruding sidewall of the substrate 1 via the insulating film 2 by using polycrystalline silicon or the like. After that, a high-concentration N-type impurity layer 6A of arsenic or the like is formed by making use of the electrode 3 as a mask. Lastly, a heat treatment is executed at a prescribed temperature and for a prescribed time; the regions 5A, 6A are activated; a drain electrode and a source electrode are formed. Thereby, since only low-concentration impurities exist under the gate electrode, it is possible to prevent a characteristic from being deteriorated by hot carriers and a high integration can be realized. |
