| 摘要 |
A semiconductor device, preferably for switching purposes, has a first field effect transistor (31, 32, 33) of enhancement type provided on a substrate (1). The transistor is separated from the substrate by an electrically insulating layer (2). On the transistor an insulating layer (4) is arranged and on this layer a second field effect transistor (51, 52, 53) is provided. The transistors are arranged such that their channel regions (32, 52) cover each other. The source regions (31, 51) and drain regions (33, 53) of the transistors have contacts (311, 511; 331, 531) for connection of control voltages between the source regions mutually and between the drain regions mutually. The transistors are of enhancement type. One of the transistors is of N-type (N-conducting type) and the other transistor is of P-type (P-conducting type). By applying control voltages between the two source contacts mutually and the two drain contacts mutually and of such polarity that the transistor of P-type becomes positive in relation to the transistor of N-type, conducting channels are produced in the confronting surfaces of the channel regions, and the transistors change into conducting state. Further, the component has connections (312, 332) for connection of a load circuit. |
