| 摘要 |
PURPOSE:To form a capacity element having a uniform and thin insulating film whose reliability is high by a method wherein platinum which is hard to oxidize is formed as a lower-part electrode. CONSTITUTION:The following are provided: an insulating film 2 formed along an inner wall of a groove 1a in a silicon substrate 1; a platinum film 3, as a lower-part electrode, formed on the insulating film 2; a capacity insulating film 4 formed on the platinum film 3; and an upper-part electrode 5. Since platinum which is hard to oxidize is formed as the lower-part electrode, a spontaneous oxide film is hardly grown. As a result, a uniform insulating film of high reliability can be formed. Since a connecting part of capacity polychrystalline silicon and a transistor becomes a platinum silicide, an ohmic contact can be formed. Thereby, it is possible to form a capacity element having a thin insulating film whose reliability is high. |
