发明名称 GAS TREATMENT DEVICE FOR PRODUCTION OF SEMICONDUCTOR
摘要 <p>PURPOSE:To prevent the pressure in a reaction vessel from fluctuating by connecting a treatment liquid receiving vessel with a gas exhausting pipe, providing a liquid surface detecting means of the treatment liquid, and connecting a supplementary vessel to the treatment liquid receiving vessel. CONSTITUTION:When the liquid level 8A of the treatment liquid 8 in a treatment vessel is lowered, a float 22 is lowered, which puts a photoswitch 25 into operation to turn a solenoid valve 26 on, and the treatment liquid 8 flows from the supplementary vessel 12 into the receiving vessel 7 to raise the liquid level 8A. When the liquid surface is reached to a specified position and the float 22 is raised to a specified position, the photoswitch 25 is turned off by the photosignal of a light emitting diode 24 on the float 22, and the solenoid valve 26 is turned off to be closed, and the flow of the treatment liquid 8 flowing from the supplementary vessel 12 into the receiving vessel 7 is stopped. By this method, the epitaxial crystal free from compositional fluctuation is obtained.</p>
申请公布号 JPH03109922(A) 申请公布日期 1991.05.09
申请号 JP19890251682 申请日期 1989.09.26
申请人 FUJITSU LTD 发明人 SAWADA AKIRA;EBE KOJI
分类号 B01D53/46;B01D53/34 主分类号 B01D53/46
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