| 摘要 |
<p>PURPOSE:To remove a protrusion called a micro pyramid which is generated on an exposed surface when a semiconductor substrate is etched by providing a non-defective layer spreading from a surface of a substrate to be formed with an element to a region including a surface to be exposed by etching. CONSTITUTION:On a semiconductor substrate 1 where an element is to be formed by etching, non-defective layer 3 is provided from a surface of the substrate 1 where the electron is to be formed to a surface to be exposed by etching. That is, no carbon atom and no oxygen atom exists in a region of a specific depth from the silicon substrate 1 surface and the non-defective layer 3 without crystal defects is provided so that no micro pyramid may not be generated in this part. Thus a neat surface free from unevenness can be obtained, there is no fluctuation in characteristics and a manufacture yield may be improved.</p> |
