| 摘要 |
PURPOSE:To obtain an element enabling execution of non-destructive read, being excellent in stability and enabling avoidance of a cross talk by making the axes of polarization of a ferroelectric thin film inclined to the direction vertical to both upper and lower electrode surfaces. CONSTITUTION:In a ferroelectric element prepared by laminating a lower electrode 33, a ferroelectric thin film 34 and an upper electrode 35 sequentially on a substrate 31, the crystal of the ferroelectric thin film 34 is so oriented that the axes 37 and 38 of polarization of the film are inclined to the direction vertical to the surfaces of both of the aforesaid electrodes. For instance, the aforesaid ferroelectric thin film 34 is made to have a chemical formula of (Pb1+alpha-xAx)(Zr1-Y-ZTiYBZ)O3+betaMeO, and the crystal structure thereof is made to be oriented 111 in a tetragonal crystal system. In the formula, alpha=0 to 0.2, y>=0.58, A is any of Ca, Sr and Ba, x=0 to 0.3, B is either Hf or Sn, z=0 to 0.3, Me is any of La, Y, Sm, Dy, Ce, Bi, Sb, Nb, Ta, W, Mo, Cr, Co, Ni, Fe, Cu, etc., or a combination of these substances in a plurality, and beta=0 to 0.05. |
