| 摘要 |
<p>A method of manufacturing a semiconductor device comprising the steps of forming a first insulating layer (2) on a semiconductor substrate (1), forming a resist film (3) sensitive to electron beams on the first insulating layer (2), applying electron beams onto a predetermined region of the resist film (3), removing unnecessary portions of the resist film (3) by using a developer, thereby forming a remaining pattern resist film (3), forming a second insulat-ing layer (4) on the entire region of the first insulating layer (2) and the remaining pattern resist film (3), simultane-ously removing the remaining pattern resist film (3) and the second insulating layer (4) which is formed thereon, thereby forming an opening of a predetermined pattern on the second insulating layer (4), and etching the first insulat-ing layer (2) through the opening, using the second insulation layer (4) as a mask, thereby causing a predetermined region of the semiconductor substrate (1) to be exposed.</p> |
