| 摘要 |
PURPOSE:To realize a simple and plain semiconductor element manufacturing process by using an ultraviolet rays irradiation baking method for hardening resists. CONSTITUTION:After an Si nitride film 2 is deposited on the entire surface of an Si substrate 1, a lower resist layer 3 is left by patterning and the film 2 is etched so as to keep the film 2 in the same form as that of the resist layer 3. Then field implanted areas 5 are formed by successively performing UV curing (ultraviolet rays irradiation baking), superimposing patterning on an upper resist layer 4 from the surface of the resist layer 3, and ion implantation. Then, after removing the resists 3 and 4 and making oxidization, the film 2 is removed. After removing the film 2, source-drain implanted areas 9 are formed by depositing polysilicon on the entire surface and performing patterning. Then, after depositing an intermediate insulating film 10 on the entire surface, contact holes 11 are patterned. Thereafter, Al wiring 12 is formed by deposing Al layer on the entire surface and performing patterning. Therefore, superimposing patterning can be performed stably and a simple and plain process can be realized. |
