| 摘要 |
<p>PURPOSE:To eliminate problems of small number of rewriting times, a large current and to obtain an erasing method using a tunnel current by floating one diffused layer, grounding a control gate and applying a voltage for blocking flow of an avalanche current between the other diffused layer and a substrate. CONSTITUTION:In a data erasing method for a semiconductor device in which a MOS transistor having a control gate 18 and a floating gate 16 is used as a memory unit, one diffused layer 14 is so floated that a current does not flow from either one diffusion layer 14 forming the source 14 or the drain 13 of the MOS transistor to a substrate 11, the gate 18 of the transistor is grounded, a voltage Vd for blocking the flow of an avalanche current is applied between the other diffused layer 13 of the transistor and the substrate 1, and a potential stored at the gate 16 is removed. For example, the source 14 is floated, and a pulse of 12.75V is simultaneously applied to both the drain 13 and a P-type well 12 for 10msec.</p> |
