| 摘要 |
<p>PURPOSE:To prevent disconnection of a drain electrode, a source electrode itself, improper contact of the source electrode with a segment electrode made of light transmission conductive oxide by forming the source electrode and the drain electrode of a TFT of a 2-layer structure having a base layer of high melting point metal such as titanium, etc. CONSTITUTION:In an active matrix type display device in which thin film transistors are disposed correspondingly in a matrix on segment electrodes 11 made of a plurality of light transmission conductive oxide films disposed in a matrix, and source electrodes 17 of the transistors are partly superposed to be connected to the electrodes 11 corresponding to the transistors, the electrodes 17 and the drain electrodes 16 of the transistors are formed of 2-layer structure having a base layer 16, made of high melting point metal such as titanium, etc., the superposing part of the electrodes 17, 11 is formed in a laminate of light transmission conductive oxide, the metal and electrode main metal, and the connecting part of a semiconductor layer 14, the electrodes 17, 16 of the transistor is formed in a laminate of semiconductor, high concentration impurity semiconductor 14', the high melting point metal and the electrode main metal.</p> |
