| 摘要 |
<p>PURPOSE:To reduce lateral voltage drop of a gate electrode without decreasing an effective area of a main electrode by respectively bringing gate terminals into pressure contact with the nearest and farthest regions of the electrode to and from the center of the main surface of a substrate, and coupling the gate terminals to connecting conductors to connect them to gate leads. CONSTITUTION:Main electrodes are provided on both main surfaces of a semiconductor substrate 2 in such a manner that one main electrode is surrounded by a gate electrode and dispersively disposed on the main surface. Gate terminals 51, 53 are brought into pressure contact with nearest and farthest regions of the gate electrode to or from the center of the main surface of the the substrate, coupled by a connecting conductor 61, and connected to a gate lead 6. For example, the annular peripheral gate terminal 53 in contact with the outermost annular gate region is so coupled by a gate connecting conductor 61 as to become coaxial with the center gate terminal 51 in contact with the gate region of the center, and the lead 6 is further connected to the terminal 51. A gate terminal 5 formed in advance is used as one assembling component.</p> |
