Method for selective epitaxy using a WSI mask

摘要

Selective growth of GaAs and related semiconductors (34) by use of tungsten silicide and related materials for growth masks (36) plus devices incorporating the selective growth plus use of the growth masks as electrical contacts are disclosed. The deposition of semiconductor (38) on such masks (36) is inhibited and single crystal vertical structures (34) grow on unmasked regions of the lattice-matched substrate (32). Variation of the mask (36) composition can vary the inhibited deposition on the mask (36) from small isolated islands of polycrystalline semiconductor (38) to a uniform layer of polycrystalline semiconductor abutting the single crystal structures. Preferred embodiments include bipolar transistors with the selectivity grown structure forming the base and emitter or collector and the mask being the base contact and also include lasers with the vertical structures including the resonant cavities with the mirros being the sidewalls of the vertical structures.