| 摘要 |
PURPOSE:To obtain the compsn. having a high sensitivity, resolution, etching resistance, and preservable stability, by constituting a resist material which can form patterns by irradiation with far UV rays, etc., of a copolymer having a specific constitutional unit and a compd. which can be acid-cloven by the irradiation with active rays. CONSTITUTION:The compd. having the constitutional unit expressed by general formulas I and II in the molecular chain is incorporated into this compsn. In the formulas, R<1> and R<3> are a hydrogen atom or alkyl group; R<2> is an alkyl group. In the formula III and IV, R<4> and R<5> are a hydrogen atom, halogen atom or alkyl group; R<6> are an alkyl group or aryl group. For example, 2- methoxystyrene, etc., are used as the more specific example of the monomer to give the constitutional unit of the formula I. Styrene, etc., are used as the more specific example of the monomer to give the constitutional unit of the formula II. The compd. which can be acid-cloven by the irradiation with active rays, i.e., photoacid generator, is satisfactory if the compd. is the material which generates Brphinsted acid or Lewis acid. |
