| 摘要 |
The invention relates to an integrated circuit including a vertical transistor having a buried collector contact region (2) with a first type of conductivity formed in a substrate (1), with a second type of conductivity opposite to the first and bordered on its entire periphery by a junction insulation region (4) with the first type of conductivity extending from a main surface of the substrate down to the said buried region. A collector region (3) with the first type of conductivity extends from the buried layer (3) up to the main surface (10), in which collector region there are formed, from the main surface (10), a collector contact pickup region (5, 5') with the first type of conductivity extending to the buried layer, as well as a base region (16) with the second type of conductivity extending over part of the thickness of the collector region (3). An emitter region (7) with the first type of conductivity is formed from the main surface (10) over a part of the thickness of the base region (6). A detection region (8) with the second type of conductivity extends from the main surface (10) over part of the thickness of the collector region (3), and at least partially surrounding the base region (6). <IMAGE>
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