| 摘要 |
PURPOSE:To prevent the generation of defects such as dislocation and the like caused by the deposition of oxygen by a method wherein, in the manufacturing process of the element such as heat treatment and the like using an Si wafer which contains the carbon having density in excess of the prescribed value, the decreasing rate of carbon density of the wafer after passing through the element manufacturing process is maintained within the prescribed range of value. CONSTITUTION:In the element manufcturing process using an Si wafer made by ordinary CZ method, the carbon density reducing rate before and after passing through various processes, including heat treatment and the like, is included in the conditions of actual processing. To be concrete, as for the wafer having an initial value C of carbon density, to be measured by inflared ray absorbing method, of 5X10<15>cm<-3> or more, the conditions of heat treatment and the like are established in such a manner wherein the density existing after passing through the process is set at C' and the decreasing rate (C-C')/C is restricted higher than 0.95. Accordingly, the carbon contained in crystal is replaced with Si and turned to a nucleus, the deposition of oxygen between lattices can be prevented, thereby enabling to prevent the deterioration of element characteristics caused by the generation of dislocation and the like. |
