| 摘要 |
<p>An apparatus for manufacturing silicon single crystals, adapted to pull up large-diameter silicon single crystals at a high yield and with a high efficiency by a rotary CZ method. A thermal shield the position and shielding width of which are specified is provided as a means for preventing the solidification, which is one of the causes of lowering the yield and productive efficiency, of molten silicon near a partitioning member, in such a manner that the thermal shield faces a meniscus portion of the molten liquid, whereby the heat radiated from the meniscus portion is shielded. This apparatus has a cylindrical body, a frusto-conical body, ora cylindrical body with a central opening-carrying flange at the bottom portion thereof. The material consists mainly of a metal, such as molybdenum and tantalum, or an electric resistance heating body.</p> |
