| 摘要 |
<p>A solid-state imager comprising a substrate (12) of a semiconductor material of one conductivity type having a major surface (14). A plurality of photodetectors (16) are in the substrate (12) and are arranged in an array of rows and columns. A separate CCD shift register (18) is in the substrate (12) along each column of the photodetectors (16) and between adjacent columns of the photodetectors (16). Each shift register (18) includes gates (44) which can be operated to selectively transfer charge carriers from the photodetectors (16) into the shift register (18). A separate drain (24) is located adjacent each photodetector (16) and a shift register (18). An anti-blooming barrier (26) is provided between each drain (24) and its adjacent photodetector (16). An exposure control barrier (28) is provided between each drain (24) and the adjacent shift register (18). The shift registers (18) are adpated to be operated to selectively reset the photodetectors (16) by transferring charge carriers from the photodetectors (16) across the shift registers (18) to the drains (24).</p> |
