| 摘要 |
<p>A resist (2) exposed to a micron or sub-micron pattern of highly absorbed radiation (3) such as far UV, ion beam, or low energy electrons, forms a highly crosslinked barrier layer (6) in the exposed regions of the resist surface. The complementary surface regions (8) are silylated in a silicon-containing reagent (7), and the exposed regions are then removed by a plasma etch (9). Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.</p> |
