| 摘要 |
PURPOSE:To offer a semiconductor memory device which is resistant to a noise and which can read out information accurately by a method wherein two bit lines constituting a bit-line pair are laminated to be of a folded bit line type. CONSTITUTION:In a semiconductor memory device, bit lines BL1a, BL1b, BL2a, BL2b,... are arranged on the same left side of sense amplifiers SA1, SA2,...; every other bit-line pairs are laminated at the upper part and the lower part. For example, the bit lines BL1a and BL1b which are connected to the sense amplifier SA1 and which constitute a bit-line pair are laminated to be a zigzag identical plane shape. The bit lines BL2a and BL2b which are connected to the sense amplifier SA2 are laminated in the same manner. By this constitution, a folded bit line type can be realized by a one-interconnecting-point cell system whose memory cell area is small; the folded bit line type is resistant to a noise and a high integration can be realized. |
