| 摘要 |
PURPOSE:To prevent dopant atoms and the like from diffusing from a doped layer by a method wherein a buffer layer formed of amorphous semiconductor which contains a specified amount of hydrogen and whose component atom is the same as that of an I-type semiconductor layer is interposed between the I-type semiconductor layer of amorphous semiconductor specified in hydrogen content and a P-type or an N-type semiconductor layer which serves as a base. CONSTITUTION:A buffer layer 5 formed of amorphous semiconductor which contains 15% or more of hydrogen and whose component atom is the same as that of an I-type semiconductor layer 6 is interposed between the I-type semiconductor layer 6 of amorphous semiconductor whose hydrogen content is 10% or below and a P-type or an N-type semiconductor layer 7 which is formed before the formation of the I-type semiconductor layer 6. By this setup, even if an I-type semiconductor layer is formed at a high temperature, dopant atoms and the like are prevented from diffusing into the I-type semiconductor layer from a doped layer, so that a photovoltaic device of this design can be improved in characteristics and reliability by forming the I-type semiconductor layer at a high temperature. |
