Highly sensitive dry developable deep UV photoresist.
摘要
<p>Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.</p>
申请公布号
EP0425411(A2)
申请公布日期
1991.05.02
申请号
EP19900480131
申请日期
1990.09.04
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
BRUNSVOLD, WILLIAM ROSS;CHIU, PHILIP;CONLEY, WILLARD EARL, JR.;CROCKATT, DALE MURRAY;MONTGOMERY, MELVIN WARREN;MOREAU, WAYNE MARTIN