Method of removing electric charge accumulated on a semiconductor substrate in ion implantation.

摘要

Disclosed is a method of removing electric charges (28) accumulated on a semiconductor substrate (21) in ion implantation by irradiating a highly accelerated electron beam (15) with acceleration energy of 1 to 50 KeV into the portion irradiated with ion beams (11) when impurity layer is formed by implanting the ion beams (11) in the semiconductor substrate (21).