| 发明名称 |
Exposure mask. |
| 摘要 |
<p>An exposure mask having phase shifting films (3) of a predetermined thickness composed of a material transparent to the wavelength of exposure light and formed on a substrate (1) transparent to such wavelength for causing a desired phase shift, wherein the phase shifting films are so patterned as to have an arrangement of repeated patterns principally. Relative to the rule width L of the repeated patterns projected onto a work member to be exposed, a pattern having a rule width of 2L/m is formed, in which m (</= 1) is a size reduction magnification in the use of a reduced-size projection exposer. The exposure mask is adapted for use in producing a diffraction grating as well. The mask is easily manufacturable without the necessity of any intricate process such as a positioned exposure, hence minimizing the number of required steps in manufacture while achieving a further fine work with an enhanced resolution higher than the known value.</p> |
| 申请公布号 |
EP0424963(A2) |
申请公布日期 |
1991.05.02 |
| 申请号 |
EP19900120595 |
申请日期 |
1990.10.26 |
| 申请人 |
SONY CORPORATION |
发明人 |
TSUMORI, TOSHIRO, C/O SONY CORPORATION;SHIMIZU, HEDEO, C/O SONY CORPORATION |
| 分类号 |
G03F1/30;G03F1/68;H01L21/027;H01L21/30 |
主分类号 |
G03F1/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
