| 摘要 |
PURPOSE:To obtain a good film quality and a plated wiring layer with a reduced fraction defective by forming the plated wiring layer with a predetermined thickness in a resist opening part with high current density and further forming the plated wiring layer with low current density. CONSTITUTION:Wiring 2 is formed on a semiconductor substrate 1 with aluminum, etc., and a PSG film 101 and a nitride film 102 are formed as an interlayer insulating film 10 and an opening part 10a is formed, and a barrier metal 111 of titanium and a close contact metal 112 of palladium are formed as a metal layer 11 on the surface by sputtering. Then, a resist 12 is applied and patterning is carried out to form a gold plated wiring layer 13 in the opening part 12a thereof. Next, the resist 12 is peeled and the close contact metal 112 and the barrier metal 111 are removed by etching with hydrogen peroxide, ammonia and aqua regia, thus, a plated wiring layer 13 is constructed from a gold plated wiring layer 131 due to high current density and a gold plated wiring layer 132 due to low current density. As a result, a highly reliable plated wiring layer, with a good film quality of low hardness and high crack resistivity and without inter-wiring short, can be obtained. |
