| 摘要 |
PURPOSE:To prevent destructions of transistors and the like caused by alloy spike and make elements fine by forming one after another a 1st aluminum electrode containing silicon and a 2nd layer Al electrode which does not contain silicon substantially at a Schottky junction region and allowing silicon contained in the 1st Al electrode to diffuse into silicon contained in the 2nd layer Al electrode. CONSTITUTION:After passing all of diffusion processes, 1st contact holes 64 in a 1st layer are formed and after that, an aluminum electrode 66 containing silicon is formed. Then a 2nd insulating film 67 is formed and the film 67 is etched to expose the 1st Al electrode 66 and then, 2nd contact holes 68 are formed. Subsequently, sputtering by argon is performed in order to remove an oxide that is formed on the surface of the 1st Al electrode 66. Finally a 2nd layer Al electrode 69 which does not contain silicon is formed and then, silicon contained in the 1st al electrode 66 is diffused into the 2nd layer Al electrode 69 with a heat treatment process and Schottky junction is formed by the 1st layer Al electrode 66. |
