| 摘要 |
PURPOSE:To control the width of an active layer uniformly to reduce reactive currents, and to improve luminous efficiency and threshold currents by forming the second mask, which covers the sides, too, of the clad layer being etched in stripe shape on an active layer, and etching it into a mesa, and stacking and growing a buried layer, and positioning the end of a current narrowing layer near the side of the active layer. CONSTITUTION:On a semiconductor substrate 1 of the first conductivity type, a buffer layer 2 of the first conductivity type, an active layer 3 to become an active region, and a clad layer 4 of the second conductivity type are stacked. Next, using the stripe- shaped first mask 13 above, the clad layer 4 is etched selectively to form the second mask 15, which covers the sides and the stripe-shaped first mask 13, and then the uncovered active layer 3 and the buffer layer 2 and the semiconductor substrate 1 are etched selectively to form a mesa stripe part 14. Furthermore, in the condition that the second mask 15 exists, the first buried layer 6 of the first conductivity type, a current narrowing layer 7 of the second conductivity type, and the second buried layer 8 of the first conductivity type are formed in order, and a mesa stripe part 14 is buried so that the end of the current narrowing layer 7 may be positioned near the side of the active layer 3. |
