| 摘要 |
PURPOSE:To reduce the resistance of an anode electrode by using a Schottky metal in this electrode only over a range which is a minimum essential to a Schottky barrier junction, and an ohmic metal over the other part. CONSTITUTION:N-type regions 4 and adjecent n<+> type regions 3 are arranged in the main surface of a semiinsulating GaAs substrate 1 each at two points. A Schottky metal is arranged partially on an n-type region 4 and extends from its center across the left edge up to the GaAs substrate to form a Schottky barrier junction at the region contacting the n-type region 4. On the other hand, an ohmic metal 21 is provided from the Schottky metal 20 up to the substrate 1 and extends up to the semiinsulating substrate 1 in the fore-stage diode 22 and up to its n<+> type region 3 in the poststage diode 23, thereby making an electrical contact. Further, an ohmic metal 24 is deposited on the n<+> type region 3. |
