METHOD FOR MANUFACTURING A PLANAR, SELF-ALIGNED EMITTER-BASE COMPLEX

摘要

A method for the manufacture of a planar, self-aligned emitter-base complex, whereby a semiconductor layer structure standard for hetero-bipolar transistors is first grown on a substrate, the base regions are subsequently etched through a mask technique and are provided with the base metallization and with a first dielectric layer and insulation implantates and spacers for electrical insulation of the base are manufactured, and, following thereupon, the emitter region is provided with the emitter metallization and with a third dielectric layer.