| 摘要 |
PURPOSE:To reduce the breakdown of capacitor insulating films upon patterning of a cell plate electrode, and to improve the yield by dividing the cell plate electrode of a memory cell capacitor in a memory cell array into a plurality of pieces in a semiconductor memory where a cell plate electrode is to be patterned by plasma treatment. CONSTITUTION:Numeral 1 represents memory cell array, 2 eight-split cell plate electrodes, 3 row address decoder, 4 column address decoder, 5 and 6 word line and bit line respectively, 7 sense amplifier, and 8 contact. Contacts 8 are positioned at positions to eight-divide a word line 5, and the memory cell array 1 is eight-divided as well as the cell plate electrode 2, so that its size is 1/8 that of a conventional example. Therefore, current flowing through the capacitor insulating film during plasma treatment reduces to 1/8. That is, it is possible that the lifetime up to breakdown extends eight times. |
