发明名称 LEAD FRAME FOR SEMICONDUCTOR
摘要 PURPOSE:To reduce cost and improve corrosion resistance, wire-bonding property, and adhesion property with a sealing resin by forming a second plating layer consisting of palladium or a palladium base alloy only at an inner lead part and/or a pad part of the base of a lead frame where a first plating layer is formed. CONSTITUTION:A first plating layer consisting of an alloy made of tin and nickel is formed on a lead frame base. This plating treatment may be a partial treatment. In this case, it is desirable that Sn should be 55-70wt.% and Ni should be 30-45wt.% as a composition of tin/nickel alloy. Further, it is more desirable that Sn should be 60-65wt.% Ni should be 35-40wt.%. Also, copper strike treatment may be performed before the first plating treatment. Then, a second plating layer consisting of palladium or a palladium base alloy is formed only at an inner lead part and/or a pad part out of the lead frame base on the surface of the first plating layer.
申请公布号 JPH03102858(A) 申请公布日期 1991.04.30
申请号 JP19890241038 申请日期 1989.09.18
申请人 DAINIPPON PRINTING CO LTD 发明人 KATO TSUNENORI;UCHIYAMA TOMOAKI
分类号 H01L21/60;H01L23/50 主分类号 H01L21/60
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