发明名称 |
Split collector vacuum field effect transistor |
摘要 |
A vacuum FET is designed to perform higher level functions such as logic AND, EXCLUSIVE OR (NOR), demultiplexing, or frequency multiplication with a single device. These higher level functions are accomplished by dividing the collector of the vacuum FET into multiple segments and by providing steering electrodes just above the emitter to deflect the field emission current to the various collector segments. The collector pattern, together with the configuration of the applied signals to the device, determines the higher order function performed.
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申请公布号 |
US5012153(A) |
申请公布日期 |
1991.04.30 |
申请号 |
US19890455217 |
申请日期 |
1989.12.22 |
申请人 |
ATKINSON, GARY M.;COURTNEY, M. DUCHESNE |
发明人 |
ATKINSON, GARY M.;COURTNEY, M. DUCHESNE |
分类号 |
H01J3/02;H01J21/10;H03K17/54 |
主分类号 |
H01J3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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