| 摘要 |
PURPOSE:To easily obtain a resist pattern having a reverse trapezoidal section by forced heating of the resist patter followed by developing at the time of baking after ionization radiation exposure. CONSTITUTION:An ionization radiation negative type resist of a chemical sensitization type is uniformly applied on a substrate 1 by spin coating or the like while being given heating and drying treatment for forming a resist film 2 to draw a desired pattern on the resist film 2 by ionization radiation 3. Then, after exposure in a state, where the resist surface side is uniformly exposed to a warm current of air 5 in a clean oven or the like, baking is performed for gradually forming a hot bridging layer 6 from the surface side of a resist layer 2 followed by performing developing in order to obtain a resist pattern. |
