| 摘要 |
PURPOSE:To obtain a good quality, even-surface semiconductor single-crystal film at the center portion of an island of a polycrystalline or amorphous semiconductor film by providing each end of the island with a region into which suface unevenness is absorbed. CONSTITUTION:While holding semiconductor films 4a, 3, 4b with their surfaces down-ward, a laser beam is radiated from a lower position up to the sufaces. Then a ''recess'' is produced at the region of the film 4a which is radiated first and a ''protrusion'' is produced at the region of the film 4b which is radiated last. Hawever, no such unevenness is present at the surface of the semiconductor film 3 situated between the films 4a, 4b. This is because variation of the semiconductor film 3 situated between the films 4a, 4b. This is because variation of the semiconductor volume due to the dissolved semiconductor movement is absorbed into the regions of the films 4a, 4b at both ends. If the resultant semiconductor films 4a, 4b tend to hinder semiconductor, elements from being formed on the semiconductor film 3, they can be removed by the photoetching method, etc., after forming a single-crystal film on the region of the film 3. |
