| 摘要 |
<p>PURPOSE:To reduce the damage of a semiconductor substrate and further to improve the controllability in etching processing by providing a vacuum chamber, which can control the temperature of the semiconductor substrate, between reaction chambers. CONSTITUTION:A vacuum chamber 4 doubling as a transfer chamber, which can control the temperature of a semiconductor substrate, is provided between reaction chambers 1 and 2. And the temperature of semiconductor substrate is raised from low temperature to high temperature by nitrogen for cooling and a lamp heater 5 for heating.</p> |
