| 摘要 |
PURPOSE: To attain improvement in output, service life and performance by providing a mirror/facet without contamination, preventing the diffusion of materials to react with a semiconductor and forming an insulating passivation layer from a material not to react with the surface of the mirror on the spot. CONSTITUTION: A carrier 20, to which a laser bar 10 is attached, is placed in a chamber 25, a chip 29 is moved to the left by a lever 27 after the inside pressure is reduced, and the bar 10 is cut at an engraving 21 so that a 1st mirror/facet MF can be formed. Continuously, the carrier 20 is turned half and the 2nd MF is similarly formed. Next, an electron beam deposition source 31 is started, a non-crystal Si layer is stuck on the exposed MF turned toward the deposition source, and monitored by a crystal oscillator 32 and when it reaches desired film thickness, processing is finished. Afterwards, the carrier 20 is rotated half and similarly deposited to the 2nd MF. Thus, a high- performance, long-service life and high-output laser can be provided.
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