发明名称 Semiconductor switching component of VLSI type - has three conductors of mutually spaced regions of semiconductor body material
摘要 The component has a semiconductor body (10) in which three conductors (14,16,20) are coupled to mutually spaced zones of the body to form an electron path to, or from, the desired zones. A conductive system (22,24) provides a current flow between the first (14) and second conductor (16), while this current flow is deflected (18) to teh third conductor (20). In at least one semicondcutor zone, the formation of a deflection zone is prevented by a doped region with a concentration different from that in the zone of a first conductivity in the semiconductor material. A deflection zone may be formed between the first conductor and the deflection preventing zone. USE/ADVANTAGE - For DRAM(S), with stable operation at very high integration density.
申请公布号 DE4032020(A1) 申请公布日期 1991.04.25
申请号 DE19904032020 申请日期 1990.10.09
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 FUJINAGA, MASATO;KOTANI, NORIHIKO;YAMANO, TSUYOSHI, ITAMI, HYOGO, JP
分类号 H01L29/68;H01L21/338;H01L29/739;H01L29/78;H01L29/812 主分类号 H01L29/68
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