| 摘要 |
<p>PURPOSE:To eliminate the point defects by the abnormal growth of a nonlinear resistance film generated during the formation of the nonlinear resistance film and further to prevent the intrusion of indium and tin into the nonlinear resistance film by introducing a process for forming a thin insulating film between a process for forming a transparent conductive film ITO and a process for forming the nonlinear resistance film. CONSTITUTION:An ITO (In, Sn oxide) film 2 is patterned by a photolithography method to form island-shaped picture element electrodes 3. The thin insulating film 4 is then formed on a substrate 1. Metals, semiconductor oxides or nitrides, such as Si2N3 and SiO2, are usable for the insulating film 4. As a result, the reaction of the ITO film 2 with gaseous hydrogen at the time of formation of the nonlinear resistance film 5 is suppressed. The abnormal growth of the nonlinear resistance film 5 on the ITO surface is obviated in this way and the breakdown voltage increases. The rate of defect generation is lowered and further the intrusion of impurities into the nonlinear resistance film 5 is suppressed. The high reliability is thus obtd.</p> |
