VERFAHREN ZUR HERSTELLUNG EINER INTEGRIERTEN MOS-HALBLEITERANORDNUNG

摘要

The invention relates to a fabrication method for an integrated MOS semiconductor device for the low-frequency range which has MOS components and conductor tracks (7) on a semiconductor substrate (1). According to the invention, the exposed surface (9) between said conductor tracks is rendered hydrophobic and this prevents the occurrence of leakage currents. Furthermore, according to the invention, in an integrated MOS semiconductor device in which the MOS components and the conductor tracks are covered with a protective layer (8), the surface of said conductor layer is rendered hydrophobic. This suppresses not only leakage currents, but also parasitic capacitances, advantageously resulting in an increase in the circuit yield. ��