发明名称 AETZANLAGE SOWIE VERFAHREN ZUM AETZEN VON GEGENSTAENDEN
摘要 An etching installation contains an etching machine (1) in which the etching agent is enriched with metal that has been etched away during the etching process. The etching agent is regenerated in an electrolytic cell (11) by electrolytic enrichment in metal. The electrolysis inside the electrolytic cell (11) is controlled by a densimeter (26) which monitors the density of the etching agent leaving the electrolytic cell (11). If this density falls below a given value, the electrolytic cell (11) is deactivated, so that the current supplied by a direct current source (13) falls from an operating value to a low resting value at which the electrolytic deposition of the metal on the electrodes (12) is equal to or slightly greater than the chemical back-etching of the metal from the electrodes (12).
申请公布号 DE3935222(A1) 申请公布日期 1991.04.25
申请号 DE19893935222 申请日期 1989.10.23
申请人 HANS HOELLMUELLER MASCHINENBAU GMBH & CO, 7033 HERRENBERG, DE 发明人 HAAS, RAINER, ING.(GRAD.), 7033 HERRENBERG, DE;BEYER, WILLI, 7270 NAGOLD, DE
分类号 C23F1/08;C23F1/46;H05K3/06 主分类号 C23F1/08
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