| 摘要 |
PURPOSE:To achieve higher integration of elements by forming gate electrodes in trench grooves for island type active regions and causing the side part of the active region to be a channel region. CONSTITUTION:A plurality of island type active regions P1-P3 separated by dielectric isolation films and insulating films 30 are juxtaposed on a p-type silicon substrate 21. A drain wiring electrode 31 is continuously formed above these regions P1-P3, and gate electrodes 29 are formed between the regions P1-P3. Drain regions 26 are formed on the regions P1-P3 under the electrode 31, and gate oxide films 28 are formed on the side surfaces of the electrode 29. Source regions 25 are formed under the electrodes 29 via field oxide films 27, and are sandwiched by gate insulating films 30 and buried in trench grooves. Then, gate electrodes are formed in the trench grooves and the side surfaces of the regions P1-P3 are caused to be channel regions so that higher integration can be achieved. |
