| 摘要 |
<p>Silicon nitride layers are deposited on glass substrates, particularly low sodium containing glass substrates, by a LPCVD system in which glass substrate is heated to a temperature below its annealing point, but above 580 DEG C, while being exposed, in a vacuum, to a flow of ammonia and dichlorosilane at a rate of 1cc/sec/10cc/sec and in which the ratio of the flow of the ammonia to that of the dichlorosilane is 6:1 - 2:1--.</p> |
