MIS capacitive element.

摘要

A semiconductor device with a capacitive element (87) of an MIS structure comprising an electrode lead segment (92) and an MIS segment (91) in which an electrode (51) is formed through a dielectric layer (49) on an impurity region (46) over to an aperture (43) in a field insulator film (42). A high-concentration impurity region (82) which connects the impurity region (46) of the MIS segment (91) to the electrode lead region (48) of the electrode lead segment (92) is formed only in the junction between the impurity region (46) and the electrode lead region (48). The parasitic capacitance between the capacitive element (87) and the semiconductor substrate (81) is reduced without increasing the parasitic resistance so as to consequently achieve high precision in forming the capacitive element (87).