发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT SCRIBE DATA
摘要 <p>PURPOSE:To increase nondefective chips in number so as to improve the chips in yield by a method wherein the width of the outermost periphery of a scribe data is so set as to satisfy formulas, width of top scribe + width of bottom scribe = width of scribe region and width of left scribe + width of right scribe = width of scribe region. CONSTITUTION:For instance, when the width of the right and the lower side of the outermost periphery of a scribe is larger than that of the left and the upper side, provided that the data widths of an upper scribe (102) and a lower scribe (103) are represented by (a) and (b) respectively, the scribe is formed so as to satisfy a formula, a + b = scribe region, Assuming that the data widths of a left scribe (104) and a right scribe (105) are represented by (c) and (d) respectively, the scribe is so formed as to satisfy a formula, c + d = width of scribe region. When a glass mask is formed using the scribe data concerned and the same pattern is drawn on a wafer in steps, a necessary scribe form can be secured for a chip on the peripheral part of the wafer, the scribe width between the chips can be set to a value as required, and a part where a pattern is doubly drawn can be eliminated, so that the pattern can be ensured in accuracy.</p>
申请公布号 JPH0399453(A) 申请公布日期 1991.04.24
申请号 JP19890236023 申请日期 1989.09.12
申请人 SEIKO EPSON CORP 发明人 KATSUNO KUNIO
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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