| 摘要 |
In a method of epitaxially depositing a semi-conductor material on to a semi-conductor substrate, the deposition is temporarily stopped. A silicon or germanium substrate is heated by R.F. coils in a quartz chamber and a gaseous mixture of hydrogen and silicon tetrachloride is passed through the chamber to deposit silicon on the substrate, after, e.g. 1/2 to 5 minutes, the flow of vapour is stopped and hydrogen only is passed through the chamber, after 5 minutes, the flow of vapour is recommenced and the deposition of silicon resumed. The substrate may have antimony as an impurity.ALSO:In a method of epitaxially depositing a semi-conductor material on to a semi-conductor substrate the deposition is temporarily stopped. A silicon or germanium substrate is heated by R.F. coils in a quartz chamber and a gaseous mixture of hydrogen and silicon tetrachloride is passed through the chamber to deposit silicon on the substrate, after, e.g. 1/2 to 5 minutes, the flow of vapour is stopped and hydrogen only is passed through the chamber, after 5 minutes, the flow of vapour is recommenced and the deposition of silicon resumed. The substrate may have antimony as an impurity.
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