| 摘要 |
PURPOSE:To effectively stably obtain a film having desired performance by changing the position where the flow of active species and the flow of precursor are made to meet, without interrupting chemical reaction. CONSTITUTION:Gas mixture of a plurality of kinds of gas is used; the flow rate of one kind of gas is changed, simultaneously the position (inner tube distance (y)) where the flow of active species is made to meet the flow of precursor is changed, thus a high quality alloy film is formed while the width of band gap is continuously changed. For example, in the case where an a-SiGe film forming chamber is set and a solar cell is formed, a substrate is carried in the a-SiGe layer forming chamber; plasma is generated and simultaneously GeF4 gas is introduced from a gas introducing pipe B, according to a flow rate diagram; the inner pipe distance (y) is controlled with a controlling motor 12 according to a diagram. That is, an origin is set as a point immediately after the plasma is generated; the flow rate of GeF4 is increased from 0 to 1sccm after 90sec: at the same time, the inner pipe distance (y) is monotonically decreased from 60mm to 20mm. |
